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spd08p06pgbtma1 Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement, 3-Pin TO-252 SPD08P06PGBTMA1
spd08p06pgbtma1 Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement, 3-Pin TO-252 SPD08P06PGBTMA1
spd08p06pgbtma1 Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement, 3-Pin TO-252 SPD08P06PGBTMA1
spd08p06pgbtma1 Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement, 3-Pin TO-252 SPD08P06PGBTMA1

Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement, 3-Pin TO-252 SPD08P06PGBTMA1

Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement, 3-Pin TO-252 SPD08P06PGBTMA1

Manufacturer:
Infineon
Manufacturer Part No:
SPD08P06PGBTMA1
Enrgtech Part No:
ET100347066
Warranty:
Manufacturer
SAR 0.50 SAR 0.50
Checking for live stock
Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
8.8A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-252
Series:
499Ω
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
300mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
42W
Typical Gate Charge Qg @ Vgs:
WR-MPC3
Forward Voltage Vf:
-1.55V
Maximum Operating Temperature:
175°C
Width:
6.22 mm
Height:
2.3mm
Standards/Approvals:
No
Length:
6.5mm
Automotive Standard:
AEC-Q101
pdf icon
0900766b80278a54.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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