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irf7319trpbf Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 6.5 A, 30 V Enhancement, 8-Pin SOIC IRF7319TRPBF
irf7319trpbf Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 6.5 A, 30 V Enhancement, 8-Pin SOIC IRF7319TRPBF
irf7319trpbf Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 6.5 A, 30 V Enhancement, 8-Pin SOIC IRF7319TRPBF

Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 6.5 A, 30 V Enhancement, 8-Pin SOIC IRF7319TRPBF

Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 6.5 A, 30 V Enhancement, 8-Pin SOIC IRF7319TRPBF

Manufacturer:
Infineon
Manufacturer Part No:
IRF7319TRPBF
Enrgtech Part No:
ET100346431
Warranty:
Manufacturer
SAR 0.71 SAR 0.71
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Product Type:
MOSFET
Channel Type:
Type P, Type N
Maximum Continuous Drain Current Id:
6.5A
Maximum Drain Source Voltage Vds:
30V
Series:
HEXFET
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
98mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
2W
Forward Voltage Vf:
-0.78V
Typical Gate Charge Qg @ Vgs:
22nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Transistor Configuration:
Isolated
Maximum Operating Temperature:
150°C
Width:
4 mm
Length:
5mm
Height:
1.5mm
Standards/Approvals:
No
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b8132ef72.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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