Infineon HEXFET Type N-Channel MOSFET, 63 A, 100 V Enhancement, 3-Pin IPAK IRFU4510PBF

Infineon HEXFET Type N-Channel MOSFET, 63 A, 100 V Enhancement, 3-Pin IPAK IRFU4510PBF

Manufacturer:
Manufacturer Part No:
IRFU4510PBF
Enrgtech Part No:
ET100339741
Warranty:
Manufacturer
SAR 1.94 SAR 1.94
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
63A
Maximum Drain Source Voltage Vds:
100V
Package Type:
IPAK
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
13.9mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
6.49kΩ
Forward Voltage Vf:
1.3V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
143W
Maximum Operating Temperature:
175°C
Length:
6.73mm
Standards/Approvals:
RoHS
Height:
2.39mm
Width:
6.22 mm
Automotive Standard:
No
pdf icon
A700000009585847.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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