Infineon HEXFET Type N-Channel MOSFET, 16 A, 100 V Enhancement, 3-Pin TO-251 IRFU3910PBF

Infineon HEXFET Type N-Channel MOSFET, 16 A, 100 V Enhancement, 3-Pin TO-251 IRFU3910PBF

Manufacturer:
Manufacturer Part No:
IRFU3910PBF
Enrgtech Part No:
ET100339732
Warranty:
Manufacturer
SAR 0.50 SAR 0.50
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
16A
Maximum Drain Source Voltage Vds:
100V
Series:
HEXFET
Package Type:
TO-251
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
115mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
29.3nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
52W
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Length:
6.73mm
Height:
2.39mm
Width:
6.22 mm
Standards/Approvals:
RoHS
Distrelec Product Id:
304-41-680
Automotive Standard:
No
pdf icon
A700000009586589.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews