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fds3890 onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 4.7 A, 80 V Enhancement, 8-Pin SOIC FDS3890
fds3890 onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 4.7 A, 80 V Enhancement, 8-Pin SOIC FDS3890
fds3890 onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 4.7 A, 80 V Enhancement, 8-Pin SOIC FDS3890

onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 4.7 A, 80 V Enhancement, 8-Pin SOIC FDS3890

onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 4.7 A, 80 V Enhancement, 8-Pin SOIC FDS3890

Manufacturer:
onsemi
Manufacturer Part No:
FDS3890
Enrgtech Part No:
ET100309723
Warranty:
Manufacturer
SAR 1.94 SAR 1.94
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
4.7A
Maximum Drain Source Voltage Vds:
80V
Package Type:
SOIC
Series:
PowerTrench
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
82mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
2W
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
25nC
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.74V
Maximum Operating Temperature:
175°C
Transistor Configuration:
Isolated
Height:
1.575mm
Standards/Approvals:
No
Length:
4.9mm
Width:
3.9 mm
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b812cf810.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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