Infineon iPB Type N-Channel MOSFET, 190 A, 60 V Enhancement, 3-Pin TO-263 IPB013N06NF2SATMA1

For more information please check the datasheets.

Infineon iPB Type N-Channel MOSFET, 190 A, 60 V Enhancement, 3-Pin TO-263 IPB013N06NF2SATMA1

Manufacturer:

Infineon

Manufacturer Part No:

IPB013N06NF2SATMA1

Enrgtech Part No:

ET100308793

Warranty:

Manufacturer

SAR 3.41

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

190A

Maximum Drain Source Voltage Vds:

60V

Package Type:

TO-263

Series:

iPB

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

1.15mΩ

Channel Mode:

Enhancement

Standards/Approvals:

Automotive Standard:

A700000009586378.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon iPB Type N-Channel MOSFET, 190 A, 60 V Enhancement, 3-Pin TO-263 IPB013N06NF2SATMA1

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