Vishay TrenchFET Type N-Channel MOSFET, 51.4 A, 100 V Enhancement, 8-Pin SO-8 SiR876BDP-T1-RE3

For more information please check the datasheets.

Vishay TrenchFET Type N-Channel MOSFET, 51.4 A, 100 V Enhancement, 8-Pin SO-8 SiR876BDP-T1-RE3

Manufacturer:

Vishay

Manufacturer Part No:

SiR876BDP-T1-RE3

Enrgtech Part No:

ET100298225

Warranty:

Manufacturer

SAR 1.11

Checking for live stock

Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

51.4A

Maximum Drain Source Voltage Vds:

100V

Series:

TrenchFET

Package Type:

SO-8

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

10.8mΩ

Channel Mode:

Enhancement

Maximum Power Dissipation Pd:

71.4W

Typical Gate Charge Qg @ Vgs:

42.7nC

A700000008282743.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay TrenchFET Type N-Channel MOSFET, 51.4 A, 100 V Enhancement, 8-Pin SO-8 SiR876BDP-T1-RE3

Product Reviews