Vishay TrenchFET Type P-Channel MOSFET, 71.9 A, 80 V Enhancement, 8-Pin SO-8 SiR681DP-T1-RE3

For more information please check the datasheets.

Vishay TrenchFET Type P-Channel MOSFET, 71.9 A, 80 V Enhancement, 8-Pin SO-8 SiR681DP-T1-RE3

Manufacturer:

Vishay

Manufacturer Part No:

SiR681DP-T1-RE3

Enrgtech Part No:

ET100298213

Warranty:

Manufacturer

SAR 2.72

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Product Type:

MOSFET

Channel Type:

Type P

Maximum Continuous Drain Current Id:

71.9A

Maximum Drain Source Voltage Vds:

80V

Series:

TrenchFET

Package Type:

SO-8

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

11.2mΩ

Channel Mode:

Enhancement

Maximum Power Dissipation Pd:

104W

Typical Gate Charge Qg @ Vgs:

69.4nC

A700000008282487.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay TrenchFET Type P-Channel MOSFET, 71.9 A, 80 V Enhancement, 8-Pin SO-8 SiR681DP-T1-RE3

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