Vishay TrenchFET Type N-Channel MOSFET, 126 A, 100 V Enhancement, 8-Pin SO-8 SiR510DP-T1-RE3

For more information please check the datasheets.

Vishay TrenchFET Type N-Channel MOSFET, 126 A, 100 V Enhancement, 8-Pin SO-8 SiR510DP-T1-RE3

Manufacturer:

Vishay

Manufacturer Part No:

SiR510DP-T1-RE3

Enrgtech Part No:

ET100298206

Warranty:

Manufacturer

SAR 2.39

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

126A

Maximum Drain Source Voltage Vds:

100V

Series:

TrenchFET

Package Type:

SO-8

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

3.6mΩ

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Maximum Gate Source Voltage Vgs:

20 V

A700000008282639.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay TrenchFET Type N-Channel MOSFET, 126 A, 100 V Enhancement, 8-Pin SO-8 SiR510DP-T1-RE3

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