Infineon OptiMOS P Type P-Channel MOSFET, 1.6 A, 30 V Enhancement, 3-Pin SOT-23 BSS308PEH6327XTSA1

Infineon OptiMOS P Type P-Channel MOSFET, 1.6 A, 30 V Enhancement, 3-Pin SOT-23 BSS308PEH6327XTSA1

Manufacturer:
Manufacturer Part No:
BSS308PEH6327XTSA1
Enrgtech Part No:
ET100298187
Warranty:
Manufacturer
SAR 0.17 SAR 0.17
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
1.6A
Maximum Drain Source Voltage Vds:
30V
Package Type:
SOT-23
Series:
0.38mm
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
130mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
5nC
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
500mW
Forward Voltage Vf:
-0.8V
Maximum Operating Temperature:
150°C
Length:
2.9mm
Standards/Approvals:
No
Height:
1mm
Width:
1.3 mm
Distrelec Product Id:
304-44-428
Automotive Standard:
AEC-Q101
pdf icon
0900766b81321f20.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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