Vishay E Type N-Channel MOSFET, 21 A, 800 V Enhancement, 3-Pin TO-263 SIHB24N80AE-GE3

For more information please check the datasheets.

Vishay E Type N-Channel MOSFET, 21 A, 800 V Enhancement, 3-Pin TO-263 SIHB24N80AE-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SIHB24N80AE-GE3

Enrgtech Part No:

ET100297994

Warranty:

Manufacturer

SAR 3.24

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

21A

Maximum Drain Source Voltage Vds:

800V

Package Type:

TO-263

Series:

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

184mΩ

Channel Mode:

Enhancement

Forward Voltage Vf:

1.2V

Minimum Operating Temperature:

-55°C

A700000008282535.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay E Type N-Channel MOSFET, 21 A, 800 V Enhancement, 3-Pin TO-263 SIHB24N80AE-GE3

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