Vishay TrenchFET Type N-Channel MOSFET, 81.2 A, 40 V Enhancement, 4-Pin SO-8 SIJA74DP-T1-GE3

For more information please check the datasheets.

Vishay TrenchFET Type N-Channel MOSFET, 81.2 A, 40 V Enhancement, 4-Pin SO-8 SIJA74DP-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SIJA74DP-T1-GE3

Enrgtech Part No:

ET100297919

Warranty:

Manufacturer

SAR 0.69

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

81.2A

Maximum Drain Source Voltage Vds:

40V

Package Type:

SO-8

Series:

TrenchFET

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

3.99mΩ

Channel Mode:

Enhancement

Maximum Power Dissipation Pd:

46.2W

Maximum Gate Source Voltage Vgs:

20 V

A700000008282551.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay TrenchFET Type N-Channel MOSFET, 81.2 A, 40 V Enhancement, 4-Pin SO-8 SIJA74DP-T1-GE3

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