Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-220 SiHP6N80AE-GE3

For more information please check the datasheets.

Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-220 SiHP6N80AE-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SiHP6N80AE-GE3

Enrgtech Part No:

ET100297900

Warranty:

Manufacturer

SAR 1.68

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

Maximum Drain Source Voltage Vds:

850V

Package Type:

TO-220

Series:

Mount Type:

Through Hole

Pin Count:

Maximum Drain Source Resistance Rds:

950mΩ

Channel Mode:

Enhancement

Maximum Power Dissipation Pd:

62.5W

Typical Gate Charge Qg @ Vgs:

15nC

A700000008282527.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-220 SiHP6N80AE-GE3

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