Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220 SiHP080N60E-GE3

For more information please check the datasheets.

Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220 SiHP080N60E-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SiHP080N60E-GE3

Enrgtech Part No:

ET100297873

Warranty:

Manufacturer

SAR 4.47

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

35A

Maximum Drain Source Voltage Vds:

650V

Package Type:

TO-220

Series:

Mount Type:

Through Hole

Pin Count:

Maximum Drain Source Resistance Rds:

80mΩ

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Typical Gate Charge Qg @ Vgs:

42nC

A700000008282659.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220 SiHP080N60E-GE3

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