Vishay TrenchFET Type P-Channel MOSFET, 3 A, 80 V Enhancement, 3-Pin SOT-23 Si2387DS-T1-GE3

For more information please check the datasheets.

Vishay TrenchFET Type P-Channel MOSFET, 3 A, 80 V Enhancement, 3-Pin SOT-23 Si2387DS-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

Si2387DS-T1-GE3

Enrgtech Part No:

ET100297806

Warranty:

Manufacturer

SAR 0.56

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Product Type:

MOSFET

Channel Type:

Type P

Maximum Continuous Drain Current Id:

Maximum Drain Source Voltage Vds:

80V

Package Type:

SOT-23

Series:

TrenchFET

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

11Ω

Channel Mode:

Enhancement

Maximum Gate Source Voltage Vgs:

20 V

Minimum Operating Temperature:

-55°C

A700000008282691.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay TrenchFET Type P-Channel MOSFET, 3 A, 80 V Enhancement, 3-Pin SOT-23 Si2387DS-T1-GE3

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