Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252 IPD30N06S215ATMA2

Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252 IPD30N06S215ATMA2

Manufacturer:
Manufacturer Part No:
IPD30N06S215ATMA2
Enrgtech Part No:
ET100293421
Warranty:
Manufacturer
SAR 0.72 SAR 0.72
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
30A
Maximum Drain Source Voltage Vds:
55V
Package Type:
TO-252
Series:
OptiMOS
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
14.7mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
136W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
41nC
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Height:
2.3mm
Width:
6.22 mm
Length:
6.5mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007835527.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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