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ipd60n10s4l12atma1 Infineon OptiMOS Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S4L12ATMA1
ipd60n10s4l12atma1 Infineon OptiMOS Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S4L12ATMA1

Infineon OptiMOS Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S4L12ATMA1

Infineon OptiMOS Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S4L12ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD60N10S4L12ATMA1
Enrgtech Part No:
ET100293413
Warranty:
Manufacturer
SAR 0.55 SAR 0.55
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
60A
Maximum Drain Source Voltage Vds:
100V
Package Type:
TO-252
Series:
OptiMOS
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
12mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
16 V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
94W
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
38nC
Maximum Operating Temperature:
175°C
Length:
6.5mm
Standards/Approvals:
No
Height:
2.3mm
Width:
6.22 mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007835339.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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