Infineon Dual CoolMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L22ATMA1

Infineon Dual CoolMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L22ATMA1

Manufacturer:
Manufacturer Part No:
IPG20N10S4L22ATMA1
Enrgtech Part No:
ET100293388
Warranty:
Manufacturer
SAR 0.97 SAR 0.97
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Product Type:
1 x 1 x 0.38mm
Channel Type:
Type N
Maximum Continuous Drain Current Id:
20A
Maximum Drain Source Voltage Vds:
100V
Series:
CoolMOS
Package Type:
TDSON
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
22mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1V
Typical Gate Charge Qg @ Vgs:
21nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
16 V
Maximum Power Dissipation Pd:
60W
Maximum Operating Temperature:
175°C
Transistor Configuration:
Dual
Height:
1mm
Width:
5.9 mm
Length:
5.15mm
Standards/Approvals:
AEC-Q101
Number of Elements per Chip:
2
Automotive Standard:
AEC-Q101
pdf icon
A700000007835283.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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