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ipd80r2k8ceatma1 Infineon CoolMOS Type N-Channel MOSFET, 1.9 A, 80 V Enhancement, 3-Pin TO-252 IPD80R2K8CEATMA1
ipd80r2k8ceatma1 Infineon CoolMOS Type N-Channel MOSFET, 1.9 A, 80 V Enhancement, 3-Pin TO-252 IPD80R2K8CEATMA1

Infineon CoolMOS Type N-Channel MOSFET, 1.9 A, 80 V Enhancement, 3-Pin TO-252 IPD80R2K8CEATMA1

Infineon CoolMOS Type N-Channel MOSFET, 1.9 A, 80 V Enhancement, 3-Pin TO-252 IPD80R2K8CEATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD80R2K8CEATMA1
Enrgtech Part No:
ET100293376
Warranty:
Manufacturer
SAR 0.59 SAR 0.59
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
1.9A
Maximum Drain Source Voltage Vds:
80V
Series:
CoolMOS
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
2.8Ω
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
12nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
42W
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Width:
6.22 mm
Standards/Approvals:
No
Length:
6.73mm
Height:
2.41mm
Automotive Standard:
No
pdf icon
A700000007834631.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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