Infineon OptiMOS 3 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin TSDSON BSZ110N06NS3GATMA1

Infineon OptiMOS 3 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin TSDSON BSZ110N06NS3GATMA1

Manufacturer:
Manufacturer Part No:
BSZ110N06NS3GATMA1
Enrgtech Part No:
ET100287050
Warranty:
Manufacturer
SAR 0.60 SAR 0.60
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
20A
Maximum Drain Source Voltage Vds:
60V
Series:
OptiMOS 3
Package Type:
TSDSON
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
11mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
0.9V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
50W
Typical Gate Charge Qg @ Vgs:
25nC
Maximum Operating Temperature:
150°C
Width:
3.4 mm
Length:
3.4mm
Standards/Approvals:
No
Height:
1mm
Automotive Standard:
No
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0900766b81321f86.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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