Renesas Electronics BEAM Type N-Channel MOSFET, 50 A, 30 V Enhancement, 8-Pin WPAK RJK0391DPA-00#J5A

Renesas Electronics BEAM Type N-Channel MOSFET, 50 A, 30 V Enhancement, 8-Pin WPAK RJK0391DPA-00#J5A

Manufacturer:
Manufacturer Part No:
RJK0391DPA-00#J5A
Enrgtech Part No:
ET100272078
Warranty:
Manufacturer
SAR 1.24 SAR 1.24
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
50A
Maximum Drain Source Voltage Vds:
30V
Series:
BEAM
Package Type:
WPAK
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.0029Ω
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Power Dissipation Pd:
50W
Typical Gate Charge Qg @ Vgs:
34nC
Maximum Operating Temperature:
150°C
Height:
0.85mm
Length:
6.1mm
Width:
5.9 mm
Standards/Approvals:
Pb-Free, Halogen-Free
Automotive Standard:
No
pdf icon
A700000008412508.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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