Toshiba Type P-Channel MOSFET, 8 A, 60 V Enhancement, 3-Pin TO-252 TJ8S06M3L

Toshiba Type P-Channel MOSFET, 8 A, 60 V Enhancement, 3-Pin TO-252 TJ8S06M3L

Manufacturer:
Manufacturer Part No:
TJ8S06M3L
Enrgtech Part No:
ET100268067
Warranty:
Manufacturer
SAR 0.81 SAR 0.81
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
8A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
130mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
10 V
Forward Voltage Vf:
1.2V
Typical Gate Charge Qg @ Vgs:
19nC
Maximum Power Dissipation Pd:
27W
Maximum Operating Temperature:
175°C
Length:
6.5mm
Height:
2.3mm
Standards/Approvals:
No
Width:
7 mm
Automotive Standard:
AEC-Q101
pdf icon
0900766b81623091.pdf(datasheets)
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0900766b81644fb3.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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