Infineon iPB Type N-Channel MOSFET, 180 A, 100 V Enhancement TO-263 IPB180N10S403ATMA1

For more information please check the datasheets.

Infineon iPB Type N-Channel MOSFET, 180 A, 100 V Enhancement TO-263 IPB180N10S403ATMA1

Manufacturer:

Infineon

Manufacturer Part No:

IPB180N10S403ATMA1

Enrgtech Part No:

ET100265796

Warranty:

Manufacturer

SAR 4.17

Checking for live stock

Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

180A

Maximum Drain Source Voltage Vds:

100V

Series:

iPB

Package Type:

TO-263

Mount Type:

Surface

Maximum Drain Source Resistance Rds:

30 % @ 100 kHz

Channel Mode:

Enhancement

Forward Voltage Vf:

Minimum Operating Temperature:

-55°C

Maximum Gate Source Voltage Vgs:

20 V

A700000009481141.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon iPB Type N-Channel MOSFET, 180 A, 100 V Enhancement TO-263 IPB180N10S403ATMA1

Product Reviews