Infineon iPB Type N-Channel MOSFET, 211 A, 650 V N TO-263 IPBE65R050CFD7AATMA1

Manufacturer:

Infineon

Manufacturer Part No:

IPBE65R050CFD7AATMA1

Enrgtech Part No:

ET100265625

Warranty:

Manufacturer

SAR 6.05

Checking for live stock

Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

211A

Maximum Drain Source Voltage Vds:

650V

Series:

iPB

Package Type:

TO-263

Mount Type:

Surface

Maximum Drain Source Resistance Rds:

40.7mΩ

Channel Mode:

Forward Voltage Vf:

1.2V

Standards/Approvals:

Automotive Standard:

A700000009484848.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon iPB Type N-Channel MOSFET, 211 A, 650 V N TO-263 IPBE65R050CFD7AATMA1

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