Infineon IPD Type P-Channel MOSFET, -50 A, -30 V Enhancement PG-TO-252 IPD50P03P4L11ATMA2

For more information please check the datasheets.

Infineon IPD Type P-Channel MOSFET, -50 A, -30 V Enhancement PG-TO-252 IPD50P03P4L11ATMA2

Manufacturer:

Infineon

Manufacturer Part No:

IPD50P03P4L11ATMA2

Enrgtech Part No:

ET100265582

Warranty:

Manufacturer

SAR 0.97

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Channel Type:

Type P

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

-50A

Maximum Drain Source Voltage Vds:

-30V

Series:

IPD

Package Type:

PG-TO-252

Mount Type:

Surface

Maximum Drain Source Resistance Rds:

10.5mΩ

Channel Mode:

Enhancement

Maximum Gate Source Voltage Vgs:

-0.31 V

Maximum Power Dissipation Pd:

58W

Minimum Operating Temperature:

-55°C

A700000009482264.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon IPD Type P-Channel MOSFET, -50 A, -30 V Enhancement PG-TO-252 IPD50P03P4L11ATMA2

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