Infineon iPB Type N-Channel MOSFET, 100 A, 120 V Enhancement TO-263 IPB100N12S305ATMA1

For more information please check the datasheets.

Infineon iPB Type N-Channel MOSFET, 100 A, 120 V Enhancement TO-263 IPB100N12S305ATMA1

Manufacturer:

Infineon

Manufacturer Part No:

IPB100N12S305ATMA1

Enrgtech Part No:

ET100265530

Warranty:

Manufacturer

SAR 3.03

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

100A

Maximum Drain Source Voltage Vds:

120V

Package Type:

TO-263

Series:

iPB

Mount Type:

Surface

Maximum Drain Source Resistance Rds:

4.8mΩ

Channel Mode:

Enhancement

Maximum Gate Source Voltage Vgs:

20 V

Typical Gate Charge Qg @ Vgs:

139nC

Maximum Power Dissipation Pd:

300W

A700000009481121.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon iPB Type N-Channel MOSFET, 100 A, 120 V Enhancement TO-263 IPB100N12S305ATMA1

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