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ipd068n10n3gatma1 Infineon IPD068N10N3 G Type N-Channel MOSFET, 90 A, 100 V Enhancement, 5-Pin TO-252 IPD068N10N3GATMA1
ipd068n10n3gatma1 Infineon IPD068N10N3 G Type N-Channel MOSFET, 90 A, 100 V Enhancement, 5-Pin TO-252 IPD068N10N3GATMA1

Infineon IPD068N10N3 G Type N-Channel MOSFET, 90 A, 100 V Enhancement, 5-Pin TO-252 IPD068N10N3GATMA1

Infineon IPD068N10N3 G Type N-Channel MOSFET, 90 A, 100 V Enhancement, 5-Pin TO-252 IPD068N10N3GATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD068N10N3GATMA1
Enrgtech Part No:
ET100258541
Warranty:
Manufacturer
SAR 0.64 SAR 0.64
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
90A
Maximum Drain Source Voltage Vds:
100V
Series:
IPD068N10N3 G
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
5
Maximum Drain Source Resistance Rds:
12.3mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
150W
Forward Voltage Vf:
1V
Typical Gate Charge Qg @ Vgs:
F93
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Length:
6.73mm
Standards/Approvals:
No
Height:
2.41mm
Width:
7.47 mm
Automotive Standard:
No
pdf icon
0900766b8172a102.pdf(datasheets)
pdf icon
0900766b81740aa8.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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