Product Type:
Power MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
7A
Maximum Drain Source Voltage Vds:
40V
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
50mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
2.6W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
150°C
Typical Gate Charge Qg @ Vgs:
8.4nC
Forward Voltage Vf:
0.74V
Transistor Configuration:
Isolated
Maximum Operating Temperature:
-55°C
Height:
1.5mm
Standards/Approvals:
AEC-Q101, RoHS, UL 94V-0, J-STD-020, MIL-STD-202
Width:
3.95 mm
Length:
4.95mm
Number of Elements per Chip:
2
Automotive Standard:
AEC-Q200, AEC-Q100, AEC-Q101
