onsemi NXH Type N-Channel MOSFET, 129 A, 1200 V Enhancement, 29-Pin PIM29 NXH008T120M3F2PTHG

onsemi NXH Type N-Channel MOSFET, 129 A, 1200 V Enhancement, 29-Pin PIM29 NXH008T120M3F2PTHG

Manufacturer:
Manufacturer Part No:
NXH008T120M3F2PTHG
Enrgtech Part No:
ET100252441
Warranty:
Manufacturer
SAR 127.96 SAR 127.96
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
129A
Maximum Drain Source Voltage Vds:
1200V
Series:
NXH
Package Type:
PIM29
Pin Count:
29
Maximum Drain Source Resistance Rds:
EIA Class II
Channel Mode:
Enhancement
Minimum Operating Temperature:
-40°C
Maximum Gate Source Voltage Vgs:
22 V
Maximum Power Dissipation Pd:
371W
Typical Gate Charge Qg @ Vgs:
454nC
Forward Voltage Vf:
4.8V
Maximum Operating Temperature:
175°C
Length:
56.7mm
Width:
42.5 mm
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000012224245.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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