onsemi Isolated PowerTrench 2 Type N, Type P-Channel MOSFET, 8.6 A, 30 V Enhancement, 8-Pin SOIC FDS8858CZ

onsemi Isolated PowerTrench 2 Type N, Type P-Channel MOSFET, 8.6 A, 30 V Enhancement, 8-Pin SOIC FDS8858CZ

Manufacturer:
Manufacturer Part No:
FDS8858CZ
Enrgtech Part No:
ET100251751
Warranty:
Manufacturer
SAR 1.10 SAR 1.10
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Product Type:
MOSFET
Channel Type:
Type N, Type P
Maximum Continuous Drain Current Id:
8.6A
Maximum Drain Source Voltage Vds:
30V
Package Type:
SOIC
Series:
PowerTrench
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
21mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
1.6W
Maximum Gate Source Voltage Vgs:
25 V
Forward Voltage Vf:
0.8V
Typical Gate Charge Qg @ Vgs:
17nC
Transistor Configuration:
Isolated
Maximum Operating Temperature:
150°C
Length:
5mm
Standards/Approvals:
No
Height:
1.5mm
Width:
4 mm
Number of Elements per Chip:
2
Automotive Standard:
No
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0900766b80d235ef.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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