STMicroelectronics MDmesh M2 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 3-Pin TO-263 STB18N60M2

STMicroelectronics MDmesh M2 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 3-Pin TO-263 STB18N60M2

Manufacturer:
Manufacturer Part No:
STB18N60M2
Enrgtech Part No:
ET100249052
Warranty:
Manufacturer
SAR 1.42 SAR 1.42
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
13A
Maximum Drain Source Voltage Vds:
650V
Series:
MDmesh M2
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
280mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.6V
Maximum Gate Source Voltage Vgs:
25 V
Maximum Power Dissipation Pd:
110W
Typical Gate Charge Qg @ Vgs:
21.5nC
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Width:
9.35 mm
Length:
10.4mm
Height:
4.6mm
Automotive Standard:
No
pdf icon
0900766b812824f9.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews