onsemi QFET Type P-Channel MOSFET, 27 A, 60 V Enhancement, 3-Pin TO-263 FQB27P06TM

onsemi QFET Type P-Channel MOSFET, 27 A, 60 V Enhancement, 3-Pin TO-263 FQB27P06TM

Manufacturer:
Manufacturer Part No:
FQB27P06TM
Enrgtech Part No:
ET100248377
Warranty:
Manufacturer
SAR 1.98 SAR 1.98
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
27A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-263
Series:
QFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
70mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
3 x 1 x 2mm
Maximum Power Dissipation Pd:
3.75W
Maximum Gate Source Voltage Vgs:
25 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
-4V
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Height:
4.83mm
Width:
9.65 mm
Length:
10.67mm
Automotive Standard:
No
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0900766b80d237ef.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
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A700000011364191.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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