onsemi QFET Type P-Channel MOSFET, 22 A, 100 V Enhancement, 3-Pin TO-263 FQB22P10TM

onsemi QFET Type P-Channel MOSFET, 22 A, 100 V Enhancement, 3-Pin TO-263 FQB22P10TM

Manufacturer:
Manufacturer Part No:
FQB22P10TM
Enrgtech Part No:
ET100248355
Warranty:
Manufacturer
SAR 2.09 SAR 2.09
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
22A
Maximum Drain Source Voltage Vds:
100V
Series:
QFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
125mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
3010
Forward Voltage Vf:
-4V
Maximum Power Dissipation Pd:
3.75W
Maximum Gate Source Voltage Vgs:
30 V
Maximum Operating Temperature:
175°C
Width:
9.65 mm
Standards/Approvals:
No
Length:
10.67mm
Height:
4.83mm
Automotive Standard:
No
pdf icon
0900766b80d237ee.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
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A700000011364191.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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