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fqb12p20tm onsemi QFET Type P-Channel MOSFET, 11.5 A, 200 V Enhancement, 3-Pin TO-263 FQB12P20TM
fqb12p20tm onsemi QFET Type P-Channel MOSFET, 11.5 A, 200 V Enhancement, 3-Pin TO-263 FQB12P20TM
fqb12p20tm onsemi QFET Type P-Channel MOSFET, 11.5 A, 200 V Enhancement, 3-Pin TO-263 FQB12P20TM

onsemi QFET Type P-Channel MOSFET, 11.5 A, 200 V Enhancement, 3-Pin TO-263 FQB12P20TM

onsemi QFET Type P-Channel MOSFET, 11.5 A, 200 V Enhancement, 3-Pin TO-263 FQB12P20TM

Manufacturer:
onsemi
Manufacturer Part No:
FQB12P20TM
Enrgtech Part No:
ET100248325
Warranty:
Manufacturer
SAR 2.02 SAR 2.02
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
Jumper Socket
Maximum Drain Source Voltage Vds:
200V
Package Type:
TO-263
Series:
QFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
470mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
3.13W
Maximum Gate Source Voltage Vgs:
30 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
31nC
Forward Voltage Vf:
-5V
Maximum Operating Temperature:
150°C
Length:
10.67mm
Standards/Approvals:
No
Height:
4.83mm
Width:
9.65 mm
Automotive Standard:
No
pdf icon
0900766b80d237df.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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