onsemi QFET Type P-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-263 FQB34P10TM

onsemi QFET Type P-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-263 FQB34P10TM

Manufacturer:
Manufacturer Part No:
FQB34P10TM
Enrgtech Part No:
ET100248304
Warranty:
Manufacturer
SAR 2.41 SAR 2.41
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
2.42mm
Maximum Drain Source Voltage Vds:
100V
Series:
QFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
60mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
25 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
-4V
Maximum Power Dissipation Pd:
3.75W
Typical Gate Charge Qg @ Vgs:
85nC
Maximum Operating Temperature:
175°C
Length:
10.67mm
Standards/Approvals:
No
Height:
4.83mm
Width:
9.65 mm
Automotive Standard:
No
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0900766b814f6506.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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