onsemi QFET Type N-Channel MOSFET, 55 A, 100 V Enhancement, 3-Pin TO-263 FQB55N10TM

onsemi QFET Type N-Channel MOSFET, 55 A, 100 V Enhancement, 3-Pin TO-263 FQB55N10TM

Manufacturer:
Manufacturer Part No:
FQB55N10TM
Enrgtech Part No:
ET100248149
Warranty:
Manufacturer
SAR 1.76 SAR 1.76
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
55A
Maximum Drain Source Voltage Vds:
100V
Series:
QFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
0.05µA
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
25 V
Maximum Power Dissipation Pd:
3.75W
Typical Gate Charge Qg @ Vgs:
75nC
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.5V
Maximum Operating Temperature:
175°C
Length:
10.67mm
Height:
4.83mm
Width:
9.65 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b80d24641.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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