fqb4n80tm onsemi Single QFET 1 Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-263 FQB4N80TM

onsemi Single QFET 1 Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-263 FQB4N80TM

For more information please check the datasheets.

onsemi Single QFET 1 Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-263 FQB4N80TM

Manufacturer:

onsemi

Manufacturer Part No:

FQB4N80TM

Enrgtech Part No:

ET100248138

Warranty:

Manufacturer

SAR 1.96

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

3.9A

Maximum Drain Source Voltage Vds:

800V

Series:

QFET

Package Type:

TO-263

Pin Count:

Maximum Drain Source Resistance Rds:

3.6Ω

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Maximum Power Dissipation Pd:

3.13W

Maximum Operating Temperature:

150°C

0900766b80d2454e.pdf(datasheets)

0900766b81644fb0.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

onsemi Single QFET 1 Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-263 FQB4N80TM

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