onsemi QFET Type N-Channel MOSFET, 10 A, 100 V Enhancement, 3-Pin TO-252 FQD13N10LTM

onsemi QFET Type N-Channel MOSFET, 10 A, 100 V Enhancement, 3-Pin TO-252 FQD13N10LTM

Manufacturer:
Manufacturer Part No:
FQD13N10LTM
Enrgtech Part No:
ET100248092
Warranty:
Manufacturer
SAR 0.66 SAR 0.66
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
10A
Maximum Drain Source Voltage Vds:
100V
Package Type:
TO-252
Series:
QFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
180mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.5V
Typical Gate Charge Qg @ Vgs:
8.7nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
2.5W
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Width:
6.1 mm
Height:
2.3mm
Length:
6.6mm
Automotive Standard:
No
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0900766b80d2466e.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
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A700000011364191.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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