onsemi QFET Type N-Channel MOSFET, 9 A, 200 V Enhancement, 3-Pin TO-252 FQD12N20LTM

onsemi QFET Type N-Channel MOSFET, 9 A, 200 V Enhancement, 3-Pin TO-252 FQD12N20LTM

Manufacturer:
Manufacturer Part No:
FQD12N20LTM
Enrgtech Part No:
ET100248065
Warranty:
Manufacturer
SAR 1.01 SAR 1.01
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
9A
Maximum Drain Source Voltage Vds:
200V
Package Type:
TO-252
Series:
QFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
280mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
2.5W
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
16nC
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.5V
Maximum Operating Temperature:
150°C
Width:
6.1 mm
Height:
2.3mm
Length:
6.6mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b80d24665.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews