onsemi QFET Type P-Channel MOSFET, 9.4 A, 60 V Enhancement, 3-Pin TO-252 FQD11P06TM

onsemi QFET Type P-Channel MOSFET, 9.4 A, 60 V Enhancement, 3-Pin TO-252 FQD11P06TM

Manufacturer:
Manufacturer Part No:
FQD11P06TM
Enrgtech Part No:
ET100248064
Warranty:
Manufacturer
SAR 1.24 SAR 1.24
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
9.4A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-252
Series:
QFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
185mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
2.5W
Forward Voltage Vf:
-4V
Typical Gate Charge Qg @ Vgs:
ROX3S
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
30 V
Maximum Operating Temperature:
150°C
Width:
6.1 mm
Length:
6.6mm
Standards/Approvals:
No
Height:
2.3mm
Automotive Standard:
No
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0900766b80d2465e.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
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A700000011364191.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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