onsemi PowerTrench Type P-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC FDS6675BZ

onsemi PowerTrench Type P-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC FDS6675BZ

Manufacturer:
Manufacturer Part No:
FDS6675BZ
Enrgtech Part No:
ET100243038
Warranty:
Manufacturer
SAR 0.77 SAR 0.77
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
11A
Maximum Drain Source Voltage Vds:
30V
Series:
PowerTrench
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
13mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
25 V
Maximum Power Dissipation Pd:
2.5W
Typical Gate Charge Qg @ Vgs:
44nC
Forward Voltage Vf:
-1.2V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Height:
1.5mm
Width:
4 mm
Standards/Approvals:
No
Length:
5mm
Automotive Standard:
No
pdf icon
0900766b80d235b4.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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