onsemi Isolated PowerTrench 2 Type N, Type P-Channel MOSFET, 6.2 A, 40 V Enhancement, 8-Pin SOIC FDS4897C

onsemi Isolated PowerTrench 2 Type N, Type P-Channel MOSFET, 6.2 A, 40 V Enhancement, 8-Pin SOIC FDS4897C

Manufacturer:
Manufacturer Part No:
FDS4897C
Enrgtech Part No:
ET100242896
Warranty:
Manufacturer
SAR 1.10 SAR 1.10
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Channel Type:
Type N, Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
6.2A
Maximum Drain Source Voltage Vds:
40V
Series:
PowerTrench
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
63mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Power Dissipation Pd:
2W
Forward Voltage Vf:
4.9 x 3.9 x 1.65mm
Typical Gate Charge Qg @ Vgs:
20nC
Minimum Operating Temperature:
-55°C
Transistor Configuration:
Isolated
Maximum Operating Temperature:
150°C
Length:
5mm
Height:
1.5mm
Standards/Approvals:
RoHS Compliant
Width:
4 mm
Number of Elements per Chip:
2
Automotive Standard:
No
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0900766b80d234a3.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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