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fds4935bz onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 6.9 A, 30 V Enhancement, 8-Pin SOIC FDS4935BZ
fds4935bz onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 6.9 A, 30 V Enhancement, 8-Pin SOIC FDS4935BZ
fds4935bz onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 6.9 A, 30 V Enhancement, 8-Pin SOIC FDS4935BZ

onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 6.9 A, 30 V Enhancement, 8-Pin SOIC FDS4935BZ

onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 6.9 A, 30 V Enhancement, 8-Pin SOIC FDS4935BZ

Manufacturer:
onsemi
Manufacturer Part No:
FDS4935BZ
Enrgtech Part No:
ET100242895
Warranty:
Manufacturer
SAR 1.13 SAR 1.13
Checking for live stock
Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
6.9A
Maximum Drain Source Voltage Vds:
30V
Series:
PowerTrench
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
22mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
1.6W
Maximum Gate Source Voltage Vgs:
25 V
Forward Voltage Vf:
-0.8V
Typical Gate Charge Qg @ Vgs:
29nC
Maximum Operating Temperature:
150°C
Transistor Configuration:
Isolated
Standards/Approvals:
No
Width:
4 mm
Height:
1.5mm
Length:
5mm
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b80d234a6.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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