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ipp50r190cexksa1 Infineon CoolMOS CE Type N-Channel MOSFET, 18.5 A, 550 V Enhancement, 3-Pin TO-220 IPP50R190CEXKSA1
ipp50r190cexksa1 Infineon CoolMOS CE Type N-Channel MOSFET, 18.5 A, 550 V Enhancement, 3-Pin TO-220 IPP50R190CEXKSA1
ipp50r190cexksa1 Infineon CoolMOS CE Type N-Channel MOSFET, 18.5 A, 550 V Enhancement, 3-Pin TO-220 IPP50R190CEXKSA1

Infineon CoolMOS CE Type N-Channel MOSFET, 18.5 A, 550 V Enhancement, 3-Pin TO-220 IPP50R190CEXKSA1

Infineon CoolMOS CE Type N-Channel MOSFET, 18.5 A, 550 V Enhancement, 3-Pin TO-220 IPP50R190CEXKSA1

Manufacturer:
Infineon
Manufacturer Part No:
IPP50R190CEXKSA1
Enrgtech Part No:
ET100226850
Warranty:
Manufacturer
SAR 1.26 SAR 1.26
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
18.5A
Maximum Drain Source Voltage Vds:
550V
Series:
CoolMOS CE
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
190mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
47.2nC
Forward Voltage Vf:
0.85V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
127W
Maximum Gate Source Voltage Vgs:
30 V
Maximum Operating Temperature:
150°C
Width:
4.57 mm
Height:
15.95mm
Standards/Approvals:
No
Length:
10.36mm
Distrelec Product Id:
304-44-440
Automotive Standard:
No
pdf icon
0900766b814ae974.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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