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ipd034n06n3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-252 IPD034N06N3GATMA1
ipd034n06n3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-252 IPD034N06N3GATMA1
ipd034n06n3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-252 IPD034N06N3GATMA1

Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-252 IPD034N06N3GATMA1

Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-252 IPD034N06N3GATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD034N06N3GATMA1
Enrgtech Part No:
ET100226291
Warranty:
Manufacturer
SAR 0.93 SAR 0.93
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
100A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-252
Series:
OptiMOS 3
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
3.4mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
98nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
167W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.9V
Maximum Operating Temperature:
175°C
Width:
6.22 mm
Height:
2.413mm
Length:
6.73mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b813299e0.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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