Enrgtech
Enrgtech

Deliver to

Saudi Arabia

Categories
Brands
Part Numbers
Top Products
Register
0
You have 0 item in your basket
VIEW BASKET CHECK OUT
ipd031n06l3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-252 IPD031N06L3GATMA1
ipd031n06l3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-252 IPD031N06L3GATMA1
ipd031n06l3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-252 IPD031N06L3GATMA1

Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-252 IPD031N06L3GATMA1

Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-252 IPD031N06L3GATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD031N06L3GATMA1
Enrgtech Part No:
ET100226262
Warranty:
Manufacturer
SAR 1.07 SAR 1.07
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
100A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-252
Series:
OptiMOS 3
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
5.2mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
59nC
Forward Voltage Vf:
0.9V
Maximum Power Dissipation Pd:
167W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Length:
6.73mm
Width:
6.22 mm
Height:
2.413mm
Automotive Standard:
No
pdf icon
0900766b813299df.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
Product Reviews