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bsc067n06ls3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 8-Pin TDSON BSC067N06LS3GATMA1
bsc067n06ls3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 8-Pin TDSON BSC067N06LS3GATMA1
bsc067n06ls3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 8-Pin TDSON BSC067N06LS3GATMA1

Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 8-Pin TDSON BSC067N06LS3GATMA1

Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 8-Pin TDSON BSC067N06LS3GATMA1

Manufacturer:
Infineon
Manufacturer Part No:
BSC067N06LS3GATMA1
Enrgtech Part No:
ET100226203
Warranty:
Manufacturer
SAR 0.64 SAR 0.64
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
50A
Maximum Drain Source Voltage Vds:
60V
Series:
OptiMOS 3
Package Type:
TDSON
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
12.1mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
0.9V
Maximum Power Dissipation Pd:
69W
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
3.2 x 4.5mm
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Length:
5.49mm
Standards/Approvals:
No
Width:
6.35 mm
Height:
1.1mm
Automotive Standard:
No
pdf icon
0900766b81329380.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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