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ipd50r380ceauma1 Infineon CoolMOS CE Type N-Channel MOSFET, 14.1 A, 550 V Enhancement, 3-Pin TO-252 IPD50R380CEAUMA1
ipd50r380ceauma1 Infineon CoolMOS CE Type N-Channel MOSFET, 14.1 A, 550 V Enhancement, 3-Pin TO-252 IPD50R380CEAUMA1
ipd50r380ceauma1 Infineon CoolMOS CE Type N-Channel MOSFET, 14.1 A, 550 V Enhancement, 3-Pin TO-252 IPD50R380CEAUMA1

Infineon CoolMOS CE Type N-Channel MOSFET, 14.1 A, 550 V Enhancement, 3-Pin TO-252 IPD50R380CEAUMA1

Infineon CoolMOS CE Type N-Channel MOSFET, 14.1 A, 550 V Enhancement, 3-Pin TO-252 IPD50R380CEAUMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD50R380CEAUMA1
Enrgtech Part No:
ET100222745
Warranty:
Manufacturer
SAR 0.67 SAR 0.67
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
14.1A
Maximum Drain Source Voltage Vds:
550V
Series:
CoolMOS CE
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
380mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
0.85V
Typical Gate Charge Qg @ Vgs:
24.8nC
Maximum Power Dissipation Pd:
36 A
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Width:
6.22 mm
Standards/Approvals:
No
Length:
6.73mm
Height:
2.41mm
Automotive Standard:
No
pdf icon
0900766b81560d90.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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