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irf8010strlpbf Infineon HEXFET Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263 IRF8010STRLPBF
irf8010strlpbf Infineon HEXFET Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263 IRF8010STRLPBF
irf8010strlpbf Infineon HEXFET Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263 IRF8010STRLPBF

Infineon HEXFET Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263 IRF8010STRLPBF

Infineon HEXFET Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263 IRF8010STRLPBF

Manufacturer:
Infineon
Manufacturer Part No:
IRF8010STRLPBF
Enrgtech Part No:
ET100222672
Warranty:
Manufacturer
SAR 1.98 SAR 1.98
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
80A
Maximum Drain Source Voltage Vds:
100V
Series:
HEXFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
15mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
81nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
260W
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Length:
10.67mm
Height:
4.83mm
Standards/Approvals:
No
Width:
9.65 mm
Automotive Standard:
No
Distrelec Product Id:
304-36-988
pdf icon
0900766b81560d59.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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