Infineon Dual HEXFET 2 Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC IRF9362TRPBF

Infineon Dual HEXFET 2 Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC IRF9362TRPBF

Manufacturer:
Manufacturer Part No:
IRF9362TRPBF
Enrgtech Part No:
ET100222644
Warranty:
Manufacturer
SAR 0.56 SAR 0.56
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
8A
Maximum Drain Source Voltage Vds:
30V
Series:
HEXFET
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
32mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
ROX3S
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
2W
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Transistor Configuration:
Dual
Length:
5mm
Standards/Approvals:
No
Width:
4 mm
Height:
1.5mm
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b81560d85.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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